CMPA601C025F Datasheet, PDF (2/11 Pages) Cree, Inc – 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature¹
Screw Torque
V_DS
V_GS
T_STG
T_J
I_GMAX
T_STG
T
84
-10, +2
-40, +150
225
23
245
40
Thermal Resistance, Junction to Case²
R_θJC
0.85
Case Operating Temperature²
T_C
-40, +150
Note¹ Refer to the Application Note on soldering at http://www.cree.com/rf/document-library
Note² See also, the Power Dissipation De-rating Curve on page 4
Units
V_DC
V_DC
˚C
˚C
mA
˚C
in-oz
˚C/W
˚C
Electrical Characteristics (Frequency = 6.0 GHz to 12.0 GHz unless otherwise stated; T_C = 25˚C)
Conditions
25˚C
25˚C
25˚C
85˚C @ P_DISS = 116 W
Characteristics
DC Characteristics^1,2
Gate Threshold
Saturated Drain Current
Drain-Source Breakdown Voltage
RF Characteristics³
Small Signal Gain
Output Power^3,4
Symbol
Min.
V_TH
-3.8
I_DS
10.6
V_BD
84
S21
P_OUT1
28
45.5
Typ.
-2.8
13.0
100
31
47.2
Max.
-2.3
–
–
–
–
Units Conditions
V
V_DS = 10 V, I_D = 23 mA
A
V_DS = 6V, V_GS = 2 V
V
V_GS = -8 V, I_DS = 23 mA
dB
dBm
V_DD = 28 V, I_DQ = 2 A, P_IN = -30 dBm
V_DD = 28 V, I_DQ = 2 A, P_IN = 22 dBm, Freq = 6 GHz
Output Power^3,4
P_OUT2
45.5
47.1
–
dBm
V_DD = 28 V, I_DQ = 2 A, P_IN = 22 dBm, Freq = 9.5 GHz
Output Power^3,4
P_OUT3
43.7
45.5
–
dBm
V_DD = 28 V, I_DQ = 2 A, P_IN = 22 dBm, Freq = 12 GHz
Power Added Efficiency^3,4
PAE₁
23
33.2
–
%
V_DD = 28 V, I_DQ = 2 A, P_IN = 22 dBm, Freq = 6 GHz
Power Added Efficiency^3,4
PAE₂
26
32.3
–
%
V_DD = 28 V, I_DQ = 2 A, P_IN = 22 dBm, Freq = 9.5 GHz
Power Added Efficiency^3,4
PAE₃
15.5
26.5
–
%
V_DD = 28 V, I_DQ = 2 A, P_IN = 22 dBm, Freq = 12 GHz
Input Return Loss
S11
–
-5
–
dB
V_DD = 28 V, I_DQ = 2 A, P_IN = -30 dBm
Output Return Loss
S22
–
-5
–
dB
V_DD = 28 V, I_DQ = 2 A, P_IN = -30 dBm
Output Mismatch Stress
VSWR
–
5:1
VSWR
No damage at all phase angles,
Y
V_DD = 28 V, I_DQ = 2 A, P_IN = 22 dBm
Notes:
1 _{Measured on-wafer prior to packaging.}
2 _{Scaled from PCM data.}
3 _{Measured in CMPA601C025F-AMP with 12.4 GHz low pass filter.}
4 _{Fixture loss de-embedded using the following offsets. The offset is subtracted from the input offset value and added to the output offset value.}
a) 6.0 GHz - 0.13 dB
b) 9.50 GHz - 0.26 dB
c) 12.0 GHz - 0.35 dB
Copyright © 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
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product and/or vendor endorsement, sponsorship or association.
2
CMPA601C025F Rev 2.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
Fax: [phone]
www.cree.com/RF