CMPA601C025F Datasheet, PDF (1/11 Pages) Cree, Inc – 25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier

CMPA601C025F
25 W, 6.0 - 12.0 GHz, GaN MMIC, Power Amplifier
The CMPA601C025F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon
carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The
semiconductor offers 25 Watts of power from 6 to 12 GHz of instantaneous
bandwidth. The GaN HEMT MMIC is housed in a thermally-enhanced, 10-
lead 25 mm x 9.9 mm metal/ceramic flanged package. It offers high gain and
superior efficiency in a small footprint package at 50 ohms.
Pa^Pc^N_ka^: _g^C_e^M_T^P_y^A_p⁶_e⁰_{: 4}¹₄^C₀⁰₂²₁⁵₃^F
Typical Performance Over 6.0-12.0 GHz (T_C = 25˚C)
Parameter
6.0 GHz 7.5 GHz
Small Signal Gain
35
34
P_OUT @ P_IN = 22 dBm
Power Gain @ P_IN = 22 dBm
PAE @ P_IN = 22 dBm
34
51
23
25
21
36
Note: All data CW.
9.0 GHz
34
49
25
35
10.5 GHz
37
49.5
25
33
12.0 GHz
31
36.5
23.5
27
Units
dB
W
dB
%
Features
• 34 dB Small Signal Gain
• 40 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.172 x 0.239 x 0.004 inches
Applications
• Jamming Amplifiers
• Test Equipment Amplifiers
• Broadband Amplifiers
Subject to change without notice.
www.cree.com/rf
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