CMPA2735075F Datasheet, PDF (2/10 Pages) Cree, Inc – 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

Absolute Maximum Ratings (not simultaneous) at 25˚C
Parameter
Symbol
Rating
Units
Drain-source Voltage
Gate-source Voltage
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Screw Torque
V_DSS
84
V_GS
-10, +2
T_STG
-65, +150
T_J
225
I_G
28
T
40
VDC
VDC
˚C
˚C
mA
in-oz
Thermal Resistance, Junction to Case (packaged)¹
R_θJC
2.5
˚C/W
Notes:
1 _{Measured for the CMPA2735075F at PDISS = 64 W.}
Electrical Characteristics (Frequency = 2.9 GHz to 3.5 GHz unless otherwise stated; T_C = 25˚C)
Conditions
25°C
25°C
25°C
300 μsec, 20%, 85°C
Characteristics
DC Characteristics
Gate Threshold Voltage
Gate Quiescent Voltage
Saturated Drain Current¹
Drain-Source Breakdown Voltage
RF Characteristics^2,3
Small Signal Gain₁
Small Signal Gain₂
Small Signal Gain₃
Power Output₁
Symbol
V_GS(TH)
V_GS(Q)
I_DS
V_BD
S21
S21
S21
P_OUT
Power Output₂
P_OUT
Power Output₃
Power Added Efficiency₁
Power Added Efficiency₂
Power Added Efficiency₃
Power Gain₁
Power Gain₂
Power Gain₃
Input Return Loss₁
Input Return Loss₂
Output Return Loss₁
Output Return Loss₂
Output Mismatch Stress
P_OUT
PAE
PAE
PAE
G_P
G_P
G_P
S11
S11
S22
S22
VSWR
Notes:
1 _{Scaled from PCM data.}
2 _{All data pulse tested in CMPA2735075F-AMP}
3 _{Pulse Width = 300 μS, Duty Cycle = 20%.}
Min.
-3.8
–
19.6
84
–
26.5
26
–
66
66
–
45
45
–
20
20
–
–
–
–
–
Typ.
-3.0
-2.7
27.4
100
29
29
27
76
82
85
54
54
53
23
21
21
-11
-16
-9
-17
–
Max.
-2.3
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
-8
-10
–4
–10
5:1
Units
Conditions
V
V_DS = 10 V, I_D = 28 mA
V_DC
V_DD = 28 V, I_DQ = 700 mA, Freq = 2.9 GHz
A
V_DS = 6.0 V, V_GS = 2.0 V
V
V_GS = -8 V, I_D = 28 mA
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 2.9 GHz
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.1 GHz
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.5 GHz
W
V_DD = 28 V, I_DQ = 700 mA, P_IN = 28 dBm, Freq =
2.9 GHz
W
V_DD = 28 V, I_DQ = 700 mA, P_IN = 28 dBm, Freq =
3.1 GHz
W
V_DD = 28 V, I_DQ = 700 mA, P_IN = 28 dBm, Freq =
3.5 GHz
%
V_DD = 28 V, I_DQ = 700 mA, Freq = 2.9 GHz
%
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.1 GHz
%
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.5 GHz
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 2.9 GHz
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.1 GHz
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.5 GHz
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.1 GHz
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.5 GHz
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.1 GHz
dB
V_DD = 28 V, I_DQ = 700 mA, Freq = 3.5 GHz
No damage at all phase angles,
Y
V_DD = 28V, I_DQ = 700mA, P_OUT = 75W CW
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product and/or vendor endorsement, sponsorship or association.
2
CMPA2735075F Rev 1.2
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
www.cree.com/rf