CMPA2735075F Datasheet, PDF (1/10 Pages) Cree, Inc – 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier

CMPA2735075F
75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior
properties compared to silicon or gallium arsenide, including higher breakdown
voltage, higher saturated electron drift velocity and higher thermal conductivity.
GaN HEMTs also offer greater power density and wider bandwidths compared
to Si and GaAs transistors. This MMIC contains a two-stage reactively matched
amplifier design approach enabling very wide bandwidths to be achieved. This
MMIC enables extremely wide bandwidths to be achieved in a small footprint
screw-down package.
PaPckNa:gCeMTPyApe2:773850007159F
Typical Performance Over 2.7-3.5 GHz (T_C = 25˚C)
Parameter
2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz
Small Signal Gain
27
29
29
28
27
Saturated
Output
Power,
P1
SAT
59
76
89
90
83
Power
Gain
@
P1
SAT
21
23
24
24
23
PAE
@
P1
SAT
43
54
56
56
56
Note¹: P_SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA.
Units
dB
W
dB
%
Features
• 27 dB Small Signal Gain
• 80 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• 0.5” x 0.5” Total Product Size
Applications
• Civil and Military Pulsed Radar Ampli-
fiers
Subject to change without notice.
www.cree.com/rf
Figure _1.
1