CMPA1D1E025F Datasheet, PDF (2/17 Pages) Cree, Inc – 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

Absolute Maximum Ratings (not simultaneous)
Parameter
Symbol
Rating
Units
Drain-source Voltage
Gate-source Voltage
Power Dissipation
Storage Temperature
Operating Junction Temperature
Maximum Forward Gate Current
Soldering Temperature¹
Screw Torque
V_DSS
V_GS
P_DISS
T_STG
T_J
I_GMAX
T_S
τ
84
-10, +2
94
-55, +150
225
10
245
40
V_DC
V_DC
W
˚C
˚C
mA
˚C
in-oz
Thermal Resistance, Junction to Case
R_θJC
1.5
˚C/W
Case Operating Temperature
T_C
-40, +85
˚C
Note:
1 _{Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp}
25˚C
25˚C
Conditions
25˚C
P_DISS = 94 W, 85˚C
CW, P_DISS = 94 W
Electrical Characteristics (Frequency = 13.75 GHz to 14.5 GHz unless otherwise stated; T_C = 25˚C)
Characteristics
DC Characteristics¹
Gate Threshold
Gate Quiscent Voltage
Saturated Drain Current²
Drain-Source Breakdown Voltage
RF Characteristics³
Small Signal Gain
Input Return Loss
Output Return Loss
Symbol
V_GS(TH)
V_Q
I_DS
V_BD
S21
S11
S22
Output Mismatch Stress
VSWR
Notes:
1 _{Measured on-wafer prior to packaging.}
2 _{Scaled from PCM data.}
3 _{Measured in the CMPA1D1E025F-AMP}
Min.
-3.8
–
14.6
84
–
–
–
–
Typ.
-3.0
-2.7
16.4
100
Max.
-2.3
–
–
–
Units Conditions
V
V_DS = 10 V, I_D = 18.2 mA
V
V_DS = 40 V, I_D = 240 mA
A
V_DS = 6.0 V, V_GS = 2.0 V
V
V_GS = -8 V, I_D = 18.2 mA
24
–
dB
V_DD = 40 V, I_DQ = 240 mA, P_IN = -15 dBm
-7
–
dB
V_DD = 40 V, I_DQ = 240 mA, P_IN = -15 dBm
-7
–
dB
V_DD = 40 V, I_DQ = 240 mA, P_IN = -15 dBm
–
5:1
Y
No damage at all phase angles, V_DD = 40 V, I_DQ = 240 mA,
P_OUT = 41 dBm OQPSK
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registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific
product and/or vendor endorsement, sponsorship or association.
2
CMPA1D1E025F Rev 1.1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: [phone]
Fax: [phone]
Fax: [phone]
www.cree.com/RF