CMPA1D1E025F Datasheet, PDF (1/17 Pages) Cree, Inc – 25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier

CMPA1D1E025F
25 W, 13.75 - 14.5 GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier
Cree’s CMPA1D1E025F is a gallium nitride (GaN) High Electron Mobility Transistor
(HEMT) based monolithic microwave integrated circuit (MMIC) on a silicon
carbide (SiC) substrate, using a 0.25 μm gate length fabrication process. The Ku
Band 25W MMIC is targeted for commercial Ku Band satellite communications
applications. It offers high gain and superior efficiency while meets OQPSK
linearity required for Satcom applications at 3dB backed off Psat operations.
This Ku Band MMIC is available in a 10 lead, 25 mm x 9.9 mm metal/ceramic
flanged package.
Pa^Pc^N_k^:_a^C_g^M_{e T}^P_y^A_p¹_e^D_:4¹₄^E₀⁰₂²₀⁵₈^F
Typical Performance Over 13.75-14.5 GHz (T_C = 25˚C)
Parameter
13.75 GHz
Small Signal Gain
24
Linear Output Power
24
Power Gain
21
Power Added Efficiency
22
14.0 GHz
24.5
23
21
20
14.25 GHz
24.5
21
20
18
14.5 GHz
24
20
20
18
Note¹: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA1D1E025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha
Filter = 0.2.
Units
dB
W
dB
%
Features
Applications
• 24 dB Small Signal Gain
• 40 W Typical Pulsed P_SAT
• Operation up to 40 V
• 20 W linear power under OQPSK
• Class A/B high gain, high efficiency 50 ohm MMIC Ku
Band high power amplifier
• Satellite Communications Uplink
Subject to change without notice.
www.cree.com/rf
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