C4D02120E_15 Datasheet, PDF (2/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

Electrical Characteristics
Symbol Parameter
Typ. Max. Unit
Test Conditions
V_F
Forward Voltage
I_R
Reverse Current
Q_C
Total Capacitive Charge
C
Total Capacitance
1.4
1.8
1.9
3
10
50
40
150
11
167
11
8
V
I_F = 2 AT_J=25°C
I_F = 2 AT_J=175°C
μA
V_R = 1200 VT_J=25°C
V_R = 1200 VT_J=175°C
V_R = 800 V, I_F = 2A
nC
di/dt = 200 A/μs
T_J = 25°C
V_R = 0 V, T_J = 25°C, f = 1 MHz
pF
V_R = 400 V, T_J = 25˚C, f = 1 MHz
V_R = 800 V, T_J = 25˚C, f = 1 MHz
E_C
Capacitance Stored Energy
3.2
μJ
V_R = 800 V
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Symbol Parameter
R_θJC
TO-252 Package Thermal Resistance from Junction to Case
Typ.
2.9
Unit
°C/W
Note
Fig. 7
Typical Performance
4
3.5
T_J=-55°C
T_J= 25°C
T_J= 75°C
T_J =125°C
3
T_J =175°C
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
V_F (V)
Figure 1. Forward Characteristics
600
500
400
300
T_J=-55°C
T_J= 25°C
200
T_J= 75°C
T_J =125°C
T_J =175°C
100
0
0
500
1000
1500
2000
V_R (V)
Figure 2. Reverse Characteristics
2
C4D02120E Rev. G