C4D02120E_15 Datasheet, PDF (1/6 Pages) Cree, Inc – Silicon Carbide Schottky Diode

C4D02120E
Silicon Carbide Schottky Diode
Z-Rec^® Rectifier
Features
• 1.2kV Schottky Rectifier
• Optimized for PFC Boost Diode Application
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• Positive Temperature Coefficient on V_F
Benefits
• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
Applications
• Solar Inverters
• Power Factor Correction
• LED Lighting Power Supplies
• X-Ray Tube Power Drivers
• EV Charging and Power Conversion
Package
TO-252-2
PIN 1
PIN 2
Part Number
C4D02120E
V_RRM =1200 V
I_F (T_C=135˚C) = 4.5 A
Q_c
= 11 nC
CASE
Package
TO-252-2
Marking
C4D02120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol Parameter
Value Unit
Test Conditions
Note
V_RRM
V_RSM
V_DC
I_F
I_FRM
I_FSM
I_F,Max
P_tot
T_J
T_stg
Repetitive Peak Reverse Voltage
1200
Surge Peak Reverse Voltage
1300
DC Blocking Voltage
Maximum DC Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Current
Power Dissipation
Operating Junction Range
Storage Temperature Range
1200
9
4.5
2
14.4
10
19
16.5
200
160
51.7
22.4
-55 to
+175
-55 to
+135
V
V
V
T_C=25˚C
A
T_C=135˚C
T_C=162˚C
A
T_C=25˚C, t_P=10 ms, Half Sine pulse
T_C=110˚C, t_P=10 ms, Half Sine pulse
A
T_C=25˚C, t_P=10 ms, Half Sine pulse
T_C=110˚C, t_P=10 ms, Half Sine pulse
A
T_C=25˚C, t_P=10 ms, Pulse
T_C=110˚C, t_P=10 ms, Pulse
W
T_C=25˚C
T_C=110˚C
˚C
˚C
1
C4D02120E Rev. G