CMPA5585025F Datasheet, PDF (1/19 Pages) Cree, Inc – 25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier

CMPA5585025F
25 W, 5.5 - 8.5 GHz, GaN MMIC, Power Amplifier
Cree’s CMPA5585025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide,
including higher breakdown voltage, higher saturated electron drift velocity
and higher thermal conductivity. GaN HEMTs also offer greater power
density and wider bandwidths compared to Si and GaAs transistors. This
MMIC is available in a 10 lead metal/ceramic flanged package for optimal
electrical and thermal performance.
PaPckNa:gCeMTPyApe5:548450022058F
Typical Performance Over 5.8-8.4 GHz (T_C = 25˚C)
Parameter
5.8 GHz
6.4 GHz
7.2 GHz
7.9 GHz
8.4 GHz
Units
Small Signal Gain
29.5
24.0
24.0
24.0
22.0
dB
Output Power¹
15
23
20
19
19
W
Power Gain¹
21.7
19.5
17.2
18.5
18.6
dB
Power Added Efficiency¹
30
25
20.5
19
19.5
%
Note¹: Measured at -30 dBc, 1.6 MHz from carrier, in the CMPA5585025F-AMP under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.2.
Features
• 25 dB Small Signal Gain
• 35 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 1.00 x 0.385 inches
Applications
• Point to Point Radio
• Communications
• Satellite Communication Uplink
Subject to change without notice.
www.cree.com/rf
1