CMPA2560025F_15 Datasheet, PDF (1/11 Pages) Cree, Inc – 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier

CMPA2560025F
25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier
Cree’s CMPA2560025F is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit (MMIC).
GaN has superior properties compared to silicon or gallium arsenide, including
higher breakdown voltage, higher saturated electron drift velocity and higher
thermal conductivity. GaN HEMTs also offer greater power density and wider
bandwidths compared to Si and GaAs transistors. This MMIC contains a
two-stage reactively matched amplifier enabling very wide bandwidths to
be achieved in a small footprint screw-down package featuring a Copper-
Tungsten heat-sink.
PaPckNa:gCeMTPyApe2:576800002159F
Typical Performance Over 2.5-6.0 GHz (T_C = 25˚C)
Parameter
2.5 GHz
4.0 GHz
6.0 GHz
Gain
27.5
24.3
23.1
Saturated
Output
Power,
P1
SAT
35.8
37.5
25.6
Power Gain @ P_OUT 43 dBm
23.1
20.9
16.3
PAE @ P_OUT 43 dBm
31.5
32.8
30.7
Note¹: P_SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
Units
dB
W
dB
%
Features
• 24 dB Small Signal Gain
• 25 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
Applications
• Ultra Broadband Amplifiers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/rf
Figure _1.
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