CMPA2560025D Datasheet, PDF (1/9 Pages) Cree, Inc – 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier

CMPA2560025D
25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier
Cree’s CMP2560025D is a gallium nitride (GaN) High Electron Mobility
Transistor (HEMT) based monolithic microwave integrated circuit
(MMIC). GaN has superior properties compared to silicon or gallium
arsenide, including higher breakdown voltage, higher saturated
electron drift velocity and higher thermal conductivity. GaN HEMTs
also offer greater power density and wider bandwidths compared to
Si and GaAs transistors. This MMIC contains a two-stage reactively
matched amplifier design approach enabling very wide bandwidths to
be achieved.
PN: _CMPA2560025D
Typical Performance Over 2.5-6.0 GHz (T_C = 25˚C)
Parameter
2.5 GHz
4.0 GHz
6.0 GHz
Units
Gain
27.5
24.3
23.1
dB
Saturated
Output
Power,
P1
SAT
35.8
37.5
25.6
W
Power Gain @ P_OUT = 43 dBm
23.1
20.9
16.3
dB
PAE @ P_OUT 43 dBm
31.5
32.8
30.7
%
Note¹: P_SAT is defined as the RF output power where the device starts to draw positive gate current in the range of 7-13 mA.
Features
Applications
• 24 dB Small Signal Gain
• 25 W Typical P_SAT
• Operation up to 28 V
• High Breakdown Voltage
• High Temperature Operation
• Size 0.180 x 0.145 x 0.004 inches
• Ultra Broadband Amplifiers
• Fiber Drivers
• Test Instrumentation
• EMC Amplifier Drivers
Subject to change without notice.
www.cree.com/rf
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