TIC225A_12 Datasheet, PDF (3/4 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M,
TIC225N, TIC225S
Notes:
1.
2.
3.
4.
5.
6.
7.
These values apply bidirectionally for any value of resistance between the gate and Main
Terminal 1.
This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C
derate linearly to 110°C case temperature at the rate of 200 mA/°C.
This value applies for one 50-Hz full-sine-wave when the device is operating at (or below)
the rated value of on-state current. Surge may be repeated after the device has returned
to original thermal equilibrium. During the surge, gate control may be lost.
This value applies for one 50-Hz half-sine-wave when the device is operating at (or below)
the rated value of on-state current. Surge may be repeated after the device has returned
to original thermal equilibrium. During the surge, gate control may be lost.
This value applies for a maximum averaging time of 20 ms.
This parameters must be measured using pulse techniques, t_W = ≤1ms, duty cycle ≤ 2 %,
voltage-sensing contacts, separate from the courrent-carrying contacts are located
within 3.2mm (1/8 inch) from de device body.
The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator
with the following characteristics : R_G = 100Ω, t_p(g) = 20 µs, t_r = ≤ 15ns, f = 1 kHz.
MECHANICAL DATA CASE TO-220
30/10/2012
COMSET SEMICONDUCTORS
3|4