TIC225A_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC225A, TIC225B, TIC225C, TIC225D, TIC225E, TIC225M,
TIC225N, TIC225S
THERMAL CHARACTERISTICS
Symbol
Ratings
R_∂JC
Junction to case thermal resistance
R_∂JA
Junction to free air thermal resistance
Value
≤ 2.5
≤ 62.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings
Test Condition(s)
Min Typ Max Unit
I_DRM
Repetitive peak V_D = Rated V_DRM, , I_G = 0
off-state current T_C = 110°C
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
I_GT
Gate trigger
current
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_GT
Gate trigger
voltage
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, I_G = 0
I_H
Holding current
initiating I_TM = 100 mA
V_supply = -12 V†, I_G = 0
initiating I_TM = -100 mA
I_L
Latching current
V_supply = +12 V† (seeNote7)
V_supply = -12 V† (seeNote7)
V_TM
Peak on-state
voltage
I_TM = ± 12 A, I_G = 50 mA (see Note6)
dv/dt
Critical rate of
rise of off-state
voltage
V_DRM = Rated V_DRM, I_G = 0
T_C = 110°C
dv/dt_©
Critical rise of
communication
voltage
V_DRM = Rated V_DRM, I_TRM = ± 12A
T_C = 70°C
† All voltages are whit respect to Main Terminal 1.
-
- ±2 mA
- 0.8 5
-
-
-4.5
-3.5
-20
-10
mA
- 11.7 30
- 0.7 2
- -0.8 -2
- -0.8 -2
V
- 0.9 2
-
3 20
mA
- -4.7 -20
-
-
-
-
30
-30
mA
- ±1.6 ±2.1 V
- ±50
-
V/µs
±1 ±1.5 ±4.5
30/10/2012
COMSET SEMICONDUCTORS
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