TIC216A Datasheet, PDF (3/3 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
Note 6: This parameters must be measured using pulse techniques, t_W = ≤1µs, duty cycle ≤ 2 %, voltage-sensing
contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch) from de device body.
Note 7: The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the
following characteristics : R_G = 100Ω, _tp(g) = 20 µs, t_r = ≤ 15ns, f = 1 kHz.
MECHANICAL DATA CASE TO-220
Pin 1 :
Pin 2 :
Pin 3 :
Main Terminal 1
Main Terminal 2
Gate
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