TIC216A Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC216A, TIC216B, TIC216D, TIC216M, TIC216N, TIC216S
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal
1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate
linearly to 110°C case temperature at the rate of 150 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated
value of on-state current. Surge may be repeated after the device has returned to original thermal
equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
THERMAL CHARACTERISTICS
Symbol
R_∂JC
R_∂JA
Ratings
Junction to case thermal resistance
Junction to free air thermal resistance
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Value
≤ 2.5
≤ 62.5
Unit
°C/W
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
I_DRM
Repetitive peak off-
state current
V_D = Rated V_DRM, , I_G = 0,
T_C = 110°C
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
I_GT
Gate trigger current
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_GT
Gate trigger voltage
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, I_G = 0,
I_H
Holding current
initiating I_TM = 100 mA
V_supply = -12 V†, I_G = 0,
initiating I_TM = -100 mA
I_L
V_TM
dv/dt
Latching current
Peak on-state voltage
Critical rate of rise of
off-state voltage
V_supply = +12 V† (seeNote7)
V_supply = -12 V† (seeNote7)
I_TM = ± 8.4 A, I_G = 50 mA (see Note6)
V_DRM = Rated V_DRM, I_G = 0
T_C = 110°C
dv/dt_©
Critical rise of
V_DRM = Rated V_DRM, I_TRM = ± 8.4A
communication voltage T_C = 70°C
† All voltages are whit respect to Main Terminal 1.
- - ±2 mA
- -5
-
-
-
-
-5
-5
mA
- - 10
- - 2.2
-
-
- -2.2
- -2.2
V
- -3
- - 30
mA
- - -30
- 50 -
- -20 -
mA
- - ±1.7 V
- ±50 -
±5 - -
V/µs
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