TIC116A_12 Datasheet, PDF (3/4 Pages) Comset Semiconductor – P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,
TIC116N, TIC116S
Notes:
1. These values apply when the gate-cathode resistance R_GK = 1kΩ
2. These values apply for continuous dc operation with resistive load. Above 70°C derate
linearly to zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave
operation with resistive load. Above 70°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below)
the rated value of peak reverse voltage and on-state current. Surge may be repeated after
the device has returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
6. This parameters must be measured using pulse techniques, t_W = 300µs, duty cycle ≤ 2 %,
voltage-sensing contacts, separate from the courrent-carrying contacts, are located within
3.2mm (1/8 inch) from de device body
.
MECHANICAL DATA CASE TO-220
29/10/2012
COMSET SEMICONDUCTORS
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