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| TIC116A_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS | |||
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SEMICONDUCTORS
TIC116A, TIC116B, TIC116C, TIC116D, TIC116E, TIC116M,
TIC116N, TIC116S
THERMAL CHARACTERISTICS
Symbol
Ratings
tgt
Gate-controlled
Turn-on time
VAA = 30 V, RL = 6 ,
RGK(eff) = 100 , Vin = 20 V
tq
Circuit-communicated
Turn-off time
VAA = 30 V, RL = 6 , IRM â 10 A
RâJC
Junction to case thermal resistance
RâJA
Junction to free air thermal resistance
Value
0.8
11
â¤3
⤠62.5
Unit
µs
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
IDRM
IRRM
IGT
VGT
IH
VTM
dv/dt
Repetitive peak off-state
current
Repetitive peak reverse
current
Gate trigger current
Gate trigger voltage
Holding current
Peak on-state voltage
Critical rate of rise of off-
state voltage
VD = Rated VDRM, RGK = 1 kâ¦
TC = 110°C
VR = Rated VRRM, IG = 0
TC = 110°C
VAA = 6 V, RL = 100 â¦
tp(g) ⥠20µs
VAA = 6 V, RL = 100 â¦
RGK = 1 kâ¦, tp(g) ⥠20µs
TC = -40°C
VAA = 6 V, RL = 100 â¦
RGK = 1 kâ¦, tp(g) ⥠20µs
VAA = 6 V, RL = 100 â¦
RGK = 1 kâ¦, tp(g) ⥠20µs
TC = 110°C
VAA = 6 V, RGK = 1 kâ¦
initiating IT = 100 mA
VAA = 6 V, RGK = 1 kâ¦
initiating IT = 100 mA
TC = -40°C
ITM = 8A (see Note6)
VD = Rated VD
TC = 110°C
Min Typ Max Unit
-
-
2 mA
-
-
2 mA
-
5 20 mA
-
- 2.5
- 0.8 1.5 V
0.2 -
-
-
- 40
mA
-
- 70
-
- 1.7 V
- 100 - V/µs
29/10/2012
COMSET SEMICONDUCTORS
2|4
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