TIC108A Datasheet, PDF (3/4 Pages) Comset Semiconductor – P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS

SEMICONDUCTORS
TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,
TIC108N, TIC108S
Notes:
1. These values apply when the gate-cathode resistance R_GK = 1k
2. These values apply for continuous dc operation with resistive load. Above 80°C derate linearly to
zero at 110°C.
3. This value may be applied continuously under single phase 50 Hz half-sine-wave operation with
resistive load. Above 80°C derate linearly to zero at 110°C.
4. This value applies for one 50 Hz half-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
5. This value applies for a maximum averaging time of 20 ms.
6. This parameters must be measured using pulse techniques, t_W = 300µs, duty cycle ≤ 2 %, voltage-
sensing contacts, separate from the courrent-carrying contacts, are located within 3.2mm (1/8 inch)
from de device body.
MECHANICAL DATA CASE TO-220
02/10/2012
COMSET SEMICONDUCTORS
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