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| TIC108A Datasheet, PDF (2/4 Pages) Comset Semiconductor – P-N-P-N SILICON REVERSE-BLOCKING TRIODE THYRISTORS | |||
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SEMICONDUCTORS
TIC108A, TIC108B, TIC108C, TIC108D, TIC108E, TIC108M,
TIC108N, TIC108S
THERMAL CHARACTERISTICS
Symbol
Ratings
tgt
Gate-controlled
Turn-on time
VAA = 30 V, RL = 6 â¦
RGK(eff) = 5 kâ¦, Vin = 50 V
tq
Circuit-communicated
Turn-off time
VAA = 30 V, RL = 6 â¦
IRM â 8 A
RâJC
Junction to case thermal resistance
RâJA
Junction to free air thermal resistance
Value
2.9
13.3
⤠3.5
⤠62.5
Unit
µs
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
IDRM
IRRM
IGT
VGT
IH
VTM
dv/dt
Repetitive peak off-state
current
Repetitive peak reverse
current
VD = Rated VDRM
RGK = 1 kâ¦, TC = 110°C
VR = Rated VRRM, IG = 0
TC = 110°C
-
- 400 µA
-
-
1 mA
Gate trigger current
VAA = 6 V, RL = 100 â¦
tp(g) ⥠20µs
0.2 - 200 µA
VAA = 6 V, RL = 100 â¦
RGK = 1 kâ¦, tp(g) ⥠20µs
TC = -40°C
-
- 1.2
Gate trigger voltage
VAA = 6 V, RL = 100 â¦
RGK = 1 kâ¦, tp(g) ⥠20µs
0.4 0.6 1
V
VAA = 6 V, RL = 100 â¦
RGK = 1 kâ¦, tp(g) ⥠20µs
TC = 110°C
0.2 -
-
Holding current
Peak on-state voltage
VAA = 6 V, RGK = 1 kâ¦
initiating IT = 20 mA
VAA = 6 V, RGK = 1 kâ¦
initiating IT = 20 mA
TC = -40°C
ITM = 5A (see Note6)
-
- 10
mA
-
- 15
-
- 1.7 V
Critical rate of rise of off-state VD = Rated VD, RGK = 1 kâ¦
voltage
TC = 110°C
-
80
- V/µs
02/10/2012
COMSET SEMICONDUCTORS
2|3
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