IRF830 Datasheet, PDF (3/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated

SEMICONDUCTORS
IRF830
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
Max.
A
9,90 10,30
B
15,65 15,90
C
13,20 13,40
D
6,45
6,65
E
4,30
4,50
F
2,70
3,15
G
2,60
3,00
H
15,75 17.15
L
1,15
1,40
M
3,50
3,70
N
-
1,37
P
0,46
0,55
R
2,50
2,70
S
4,98
5,08
T
2.49
2.54
U
0,70
0,90
Pin 1 :
Pin 2 :
Pin 3 :
Gate
Drain
Source
Revised August 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
09/11/2012
COMSET SEMICONDUCTORS
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