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| IRF830 Datasheet, PDF (2/3 Pages) NXP Semiconductors – PowerMOS transistor Avalanche energy rated | |||
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SEMICONDUCTORS
IRF830
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VDSS
VGS(th)
IDSS
IGSS
RDS(on)
Drain-Source Breakdown
Voltage
Gate-threshold Voltage
Zero Gate Voltage Drain
Current
Gate-Source leakage
Current
Drain-Source on Resistance
ID= 250 µA, VGS= 0 V
ID= 250 µA, VGS= VDS
VDS= 500 V, VGS= 0 V
Tj= 25 °C
VDS= 500 V, VGS= 0 V
Tj= 125 °C
VGS= 20 V, VDS= 0 V
ID= 2.7 A, VGS= 10 V
DYNAMIC CHARACTERISTICS
Symbol
Ratings
gfs
CISS
COSS
CRSS
td(on)
tr
td(off)
tf
Transconductance
Input Capacitance
Output Capacitance
Reverse transfer
Capacitance
Turn-on Delay Time
Rise time
Turn-off Delay Time
Fall Time
REVERSE DIODE
Test Condition(s)
VDS >ID(on)*RDS(on)max
ID= 2.5 A
VGS= 0 V, VDS= 25 V
f= 1MHz
VDD= 225 V,
ID= 2.5 A, RGS= 15 â¦
Symbol
IS
ISM
VSD
Trr
Qrr
Ratings
Test Condition(s)
Inverse Diode Continuous
Forward Current.
Inverse diode direct current,
pulsed.
Inverse Diode Forward
voltage
TC = 25°C
TC = 25°C
VGS = 0 V, IF = 4.5 A
Reverse Recovery Time
Reverse Recovery Charge
IF = 3.1 A
di/dt = 100 A/µs
09/11/2012
COMSET SEMICONDUCTORS
Min Typ Max Unit
500 -
-
V
2
3
4
V
-
- 25
µA
-
- 250
-
- 100 nA
-
- 1.5 â¦
Min Typ Max Unit
2.5 -
-
S
-
- 800
-
- 200 pF
-
- 60
-
- 30
-
-
-
-
30
55
ns
-
- 30
Min Typ Max Unit
-
- 4.5
A
-
- 18
-
- 1.6 V
- 320 640 ns
-
1
2 µC
2/3
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