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| BDV67A Datasheet, PDF (3/5 Pages) Comset Semiconductor – NPN SILICON DARLINGTONS POWER TRANSISTORS | |||
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BDV67A, B, C, D
Symbol
Ratings
Test Condition(s)
Min
Typ
M
x
Unit
hFE
VCE(SAT)
DC Current Gain
VCE=3 V, IC=1 A
VCE=3 V, IC=10 A
VCE=3 V, IC=16 A
Collector-Emitter saturation
Voltage (*)
IC=10 A, IB=40 mA
VBE
Base-Emitter Voltage(1&2) VCE=3 V, IC=10 A
VF
Diode forward voltage
IF=10 A
Cc
IE=0 A, VCB=10V
ton
Switching times
toff
fhfe
VCC=12V, IC=-10 A
IB1=-IB2=0.04 A
VCE=-3 V, IC=-5 A
- 3000 -
1000 - - -
- 1000 -
BDV67A
BDV67B
BDV67C
-
- 2V
BDV67D
BDV67A
BDV67B
BDV67C
-
- 2,5 V
BDV67D
BDV67A
BDV67B
BDV67C
-
- 3V
BDV67D
BDV67A
BDV67B
BDV67C
-
300 - pF
BDV67D
BDV67A
BDV67B
BDV67C
-
1-
BDV67D
BDV67A
µs
BDV67B
BDV67C
-
3.5 -
BDV67D
BDV67A
BDV67B
BDV67C
-
60 - kHz
BDV67D
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
COMSET SEMICONDUCTORS
3/5
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