BDV67A Datasheet, PDF (2/5 Pages) Comset Semiconductor – NPN SILICON DARLINGTONS POWER TRANSISTORS

BDV67A, B, C, D
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-mb
Thermal Resistance, Junction to
Mounting Base
BDV67A
BDV67B
BDV67C
BDV67D
Value
0.625
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
I_CEO
Collector Cutoff Current
I_EBO
Emitter Cutoff Current
Collector-Base Cutoff
I_CBO
Current
Test Condition(s)
Min Typ Mx Unit
V_CE=40 V
V_CE=50 V
V_CE=60 V
V_CE=75 V
V_BE=5 V
T_j=25°C, V_CB= V_CBO
T_j=150°C, V_CB= V_CBO
BDV67A -
BDV67B -
BDV67C -
BDV67D -
BDV67A -
BDV67B
BDV67C
BDV67D
BDV67A -
BDV67B
BDV67C
BDV67D
BDV67A -
BDV67B
BDV67C
BDV67D
-
-
3 mA
-
-
-
5.0 mA
-
1
mA
-
5
COMSET SEMICONDUCTORS
2/5