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BDV66 Datasheet, PDF (3/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,60-100V,125W)
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BDV66-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
ICEO
IEBO
ICBO
VCEO
hFE
VCE(SAT)
VBE
COB
Collector Cutoff
Current
VCE= -40 V, IB= 0
VCE= -50 V, IB= 0
VCE= -60 V, IB= 0
VCE= -70 V, IB= 0
BDV66
BDV66A
-
BDV66B
BDV66C
BDV66
-
-1 mA
Emitter Cutoff
Current
VBE= -5 V, IC= 0
BDV66A
BDV66B
-
-
-5 mA
BDV66C
VCB= -80 V BDV66
Collector Cutoff
Current
IE= 0
VCB= -100 V BDV66A
Tj=25°C VCB= -120 V BDV66B
-
VCB= -140 V BDV66C
VCB= -40 V BDV66
-
-1
mA
IE= 0
VCB= -50 V
Tj=150°C VCB= -60 V
BDV66A
BDV66B
-
-
-5
VCB= -70 V BDV66C
Collector-Emitter
Breakdown Voltage
(*)
IC= -100 mA, IB = 0
BDV66 -60 -
-
BDV66A -80 -
BDV66B -100 -
-
V
BDV66C -120 -
-
BDV66
DC Current Gain (*) VCE= -3 V, IC= -10 A
BDV66A
BDV66B
1000
-
-
-
BDV66C
Collector-Emitter
saturation Voltage (*) IC= -10 A, IB= -40 mA
BDV66
BDV66A
BDV66B
-
-
-2
V
BDV66C
BDV66
Base-Emitter
Voltage(*)
VCE= -3 V, IC= -10 A
BDV66A
BDV66B
-
- -2,5 V
BDV66C
BDV66
Output Capacitance
VCB= -10 V, IE= 0
ftest= 1 MHz
BDV66A
BDV66B
- 300 -
pF
BDV66C
26/09/2012
COMSET SEMICONDUCTORS
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