BDV66 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(16A,60-100V,125W)

BDV66-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
P_T
Power Dissipation T_mb = 25° C
T_J
Junction Temperature
T_S
Storage Temperature
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
BDV66
BDV66A
BDV66B
BDV66C
Value
175
150
-65 to +150
Unit
Watts
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thj-c
Thermal Resistance, Junction to Case
Value
0.625
Unit
°C / W
SWITCHING TIMES
Symbol
Ratings
Test Condition(s)
t_on
turn-on time
t_off
turn-off time
I_C= 10 A , V_CC= 12 V
I_B1 = -I_B2 = 40 mA
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 1.5 %
Value
Min Typ Max
-
1
-
- 3.5 -
Unit
µs
26/09/2012
COMSET SEMICONDUCTORS
2/4