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| BDV65 Datasheet, PDF (3/4 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS | |||
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BDV65-A-B-C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Mx Unit
Collector Cutoff
ICEO
Current
VCE= 30 V, IB= 0
VCE= 40 V, IB= 0
VCE= 50 V, IB= 0
BDV65
BDV65A
BDV65B
-
-
VCE= 60 V, IB= 0
BDV65C
BDV65
IEBO
Emitter Cutoff Current VBE= 5 V, IC= 0
BDV65A
BDV65B
-
-
BDV65C
VCB= 60 V BDV65
Collector Cutoff
ICBO
Current
IE= 0
VCB= 80 V BDV65A
Tj=25°C VCB= 100 V BDV65B
-
-
VCB= 120 V BDV65C
VCB= 30 V BDV65
IE= 0
VCB= 40 V
Tj=150°C VCB= 50 V
BDV65A
BDV65B
-
-
VCB= 60 V BDV65C
BDV65
60 -
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= 30 mA, IB = 0
BDV65A
80
-
BDV65B 100 -
BDV65C 120 -
BDV65
hFE
DC Current Gain (*) VCE= 4 V, IC= 5 A
BDV65A
BDV65B
1000
-
BDV65C
VCE(SAT)
Collector-Emitter
saturation Voltage (*) IC= 5 A, IB= 20 mA
BDV65
BDV65A
BDV65B
-
-
BDV65C
BDV65
VBE
Base-Emitter
Voltage(*)
VCE= 4 V, IC= 5 A
BDV65A
BDV65B
-
-
BDV65C
(*) Pulse Width â 300 µs, Duty Cycle â 1.5 %
2 mA
5 mA
0.4
mA
2
-
-
V
-
-
-
2
V
2,5 V
26/09/2012
COMSET SEMICONDUCTORS
3/4
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