BDV65 Datasheet, PDF (2/4 Pages) Power Innovations Ltd – NPN SILICON POWER DARLINGTONS

BDV65-A-B-C
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
T_mb = 25° C
P_T
Power Dissipation
T_mb = 25° C
T_J
Junction Temperature
T_S
Storage Temperature
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thj-c
Thermal Resistance, Junction to Case
R_thj-a
Thermal Resistance, Junction to Ambient
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
Value
125
3.5
150
-65 to +150
Unit
Watts
°C
BDV65
BDV65A
BDV65B
BDV65C
BDV65
BDV65A
BDV65B
BDV65C
Value
1
35.7
Unit
°C / W
26/09/2012
COMSET SEMICONDUCTORS
2/4