BDT82 Datasheet, PDF (3/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors

PNP BDT82 – BDT84 – BDT86 – BDT88
NPN BDT81 – BDT83 – BDT85 – BDT87
-V_BE
Base-Emitter voltage (1) -IC=5 A , -VCE=4 V
BDT82
BDT84
BDT86
BDT88
- - 1.5 V
Symbol
-I_S/B
f_T
t_on
T_off
Ratings
Test Condition(s)Sec
Second breakdown collector
current
Transition frequency
Turn-on time
Turn-off time
-V_CE=50 V , t_P = 100 ms
-V_CE=10 V , -I_C=0.5 A , f=1 MHz
-I_C=7 A , -I_B1 = I_B2 =0.7 A
-I_C=7 A , -I_B1 = I_B2 =0.7 A
(1) Pulse Duration = 300 µs, δ <= 2%
MECHANICAL DATA CASE TO-220
DIMENSIONS
mm
inches
A
9,86
0,39
B
15,73
0,62
C
13,37
0,52
D
6,67
0,26
E
4,44
0,17
F
4,21
0,16
G
2,99
0,11
H
17,21
0,68
L
1,29
0,05
M
3,6
0,14
N
1,36
0,05
P
0,46
0,02
R
2,1
0,08
S
5
0,19
T
2,52 0,098
U
0,79
0,03
Pin 1 :
Pin 2 :
Pin 3 :
Base
Collector
Emitter
Min Typ Mx Unit
2.5 - -
A
- 20 - MHz
- -1
-
-
2
µs
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
COMSET SEMICONDUCTORS
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