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| BDT82 Datasheet, PDF (2/3 Pages) Inchange Semiconductor Company Limited – isc Silicon PNP Power Transistors | |||
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PNP BDT82 â BDT84 â BDT86 â BDT88
NPN BDT81 â BDT83 â BDT85 â BDT87
Symbol
Ratings
TJ
Junction Temperature
TStg
Storage Temperature
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
Value
150
Unit
°C
-65 to +150 °C
THERMAL CHARACTERISTICS
Symbol
RthJa
RthJmb
Ratings
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Mounting Base
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
-ICB0
Collector Cutoff Current
-ICES
Collector Cutoff Current
-IEBO
Emitter Cutoff Current
Test Condition(s)
-IE=0A , -VCB=60 V
-IE=0A , -VCB=80 V
-IE=0A , -VCB=100 V
-IE=0A , -VCB=120 V
-VBE=0 , -VCE= 60V
-VBE=0 , -VCE= 80V
-VBE=0 , -VCE= 100V
-VBE=0 , -VCE= 120V
-VEB=7.0 V, -IC=0
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
HFE
DC Current Gain (1)
-VCE(SAT)
Collector-Emitter
saturation Voltage (1)
-IC=50 m A , -VCE=10 V
-IC=5 A , -VCE=4.0 V
-IC=5 A , -IB=0.5 A
-IC=7 A , -IB=0.7 A
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
BDT82
BDT84
BDT86
BDT88
Value
70
1
Unit
K/W
K/W
Min Typ Mx Unit
- - 0.2
-
-
-
-
0.2
0.2
mA
- - 0.2
- -1
-
-
-
-
1
1
mA
- -1
- - 0.1 mA
40 - -
-
40 - -
- -1
V
- - 1.6
COMSET SEMICONDUCTORS
2/3
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