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| TIP130 Datasheet, PDF (2/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,60-100V,70W) | |||
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SEMICONDUCTORS
NPN TIP130 â 131 â 132
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO
Collector-Emitter
Breakdown Voltage (*)
IC= 30 mA
IB= 0
VCB = VCEO
ICBO
Collector-Emitter sustaining IE= 0
Current
VCB = VCEO
IE= 0
TC=100°C
ICEO
Collector-Emitter Cutoff
Current
VCE = 30 V
VCE = 40 V
VCE = 50 V
IEBO
VCE(SAT)
VBE
hFE
COBO
Emitter Cutoff Current
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Forward Current transfer
ratio (*)
Output Capacitance
VEB= 5 V
IC= 0
IC= 4A
IB= 16 mA
IC= 6 A
IB= 30 mA
VCE= 4 V
IC= 4 A
VCE= 4 V
IC= 1 A
VCE= 4 V
IC= 4 A
VCB=10 V
IE=0
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
Min Typ Max Unit
60 -
-
80 -
-
V
100 -
-
-
- 0.2
-
- 0.2
-
-
-
-
0.2
1
mA
-
-
1
-
-
1
-
- 0.5
-
- 0.5 A
-
- 0.5
-
-
5 mA
-
-
2
V
-
-
3
-
- 2.5 V
500 -
-
1000
-
1500
0
-
-
- 200 pF
30/10/2012
COMSET SEMICONDUCTORS
2/3
09/11/2012
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