TIP130 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,60-100V,70W)

SEMICONDUCTORS
NPN TIP130 – 131 – 132
SILICON DARLINGTON POWER TRANSISTORS
NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe.
They are intented for use in power linear and switching applications.
The complementary PNP types are TIP135/136/137
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
Collector-Base Voltage (I_E= 0)
V_CEO
V_EBO
I_C
I_CM
I_B
P_T
t_J
t_s
Collector-Emitter Voltage (I_B= 0)
Emitter-Base Voltage (I_C= 0)
Collector Current
Collector Peak Current (1)
Base Current
Power Dissipation
Junction Temperature
Storage Temperature range
T_case
t_amb
Value
TIP130
TIP131
TIP132
TIP130
TIP131
TIP132
@ T_mb < 25°
60
80
100
60
80
100
5
8
12
0.3
70
2
150
-65 to +150
Unit
V
V
V
A
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
R_thJA
From Junction to Case Thermal Resistance
From Junction to Free-Air Thermal Resistance
Value
1.78
62.5
Unit
°C/W
30/10/2012
COMSET SEMICONDUCTORS
1/3
09/11/2012