TIC246B_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol Ratings
Test Condition(s)
Min Typ Max Unit
I_DRM
Repetitive peak V_D = Rated V_DRM, , I_G = 0
off-state current T_C = 110°C
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
I_GT
Gate trigger
current
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_GT
Gate trigger
voltage
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = +12 V†, I_G = 0
I_H
Holding current ^{initiating I}TM ^{= 100 mA}
V_supply = -12 V†, I_G = 0
initiating I_TM = -100 mA
I_L
Latching
current
V_supply = +12 V† (seeNote5)
V_supply = -12 V† (seeNote5)
V_TM
Peak on-state
voltage
I_TM = ± 22.5 A, I_G = 50 mA (see Note4)
dv/dt
Critical rate of
rise of off-state
voltage
V_DRM = Rated V_DRM, I_G = 0
T_C = 110°C
di/dt
Critical rate of
rise of off-state
current
V_DRM = Rated V_DRM, I_GT = 50 mA
di_G/dt = 50mA/µs, T_C = 110°C
dv/dt_©
Critical rise of
communication
voltage
V_DRM = Rated V_DRM, I_T = 1.4 I_T(RMS)
di/dt = 0.5 I_T(RMS) /ms, T_C = 80°C
† All voltages are whit respect to Main Terminal 1.
-
-
- 12
- -19
- -16
- 34
- 0.8
- -0.8
- -0.8
- 0.9
- 22
- -22
-
-
-
-
- ±1.4
- ±400
- ±100
±1.2 ±9
±2 mA
50
-50
-50
mA
-
2
-2
-2
V
2
40
mA
-40
80
-80
mA
±1.7 V
- V/µs
- A/µs
- V/µs
Notes:
1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 70°C derate linearly to
110°C case temperature at the rate of 400 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated
value of peak reverse voltage and on-state current. Surge may be repeated after the device has
returned to original thermal equilibrium.
4. This parameters must be measured using pulse techniques, t_W = ≤1ms, duty cycle ≤ 2 %, voltage-
sensing contacts, separate from the courrent-carrying contacts are located within 3.2mm (1/8 inch)
from de device body.
5. The triacs are triggered by a 15-V (open circuit amplitude) pulse supplied by a generator with the
following characteristics : R_G = 100Ω, t_p(g) = 20 µs, t_r = ≤ 15ns, f = 1 kHz.
30/10/2012
COMSET SEMICONDUCTORS
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