TIC246B_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC246B, TIC246C, TIC246D, TIC246E, TIC246M, TIC246N,
TIC246S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• High current triacs
• 16 A RMS
• 70 A Peak
• Glass Passivated Wafer
• 200 V to 800 V Off-State Voltage
• Max I_GT of 50 mA (Quadrants 1-3)
• 125 A peak current
• Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state to
the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_DRM
I_T(RMS)
I_TSM
I_GM
T_C
T_stg
T_L
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at
(or below) 70°C case temperature
(see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak gate current
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from
case for 10 seconds
Value
Unit
B C D EMSN
200 300 400 500 600 700 800 V
16
A
125
A
±1
A
-40 to +110
°C
-40 to +125
°C
230
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_∂JC
Junction to case thermal resistance
R_∂JA
Junction to free air thermal resistance
30/10/2012
COMSET SEMICONDUCTORS
Value
≤ 1.9
≤ 62.5
Unit
°C/W
1|3