TIC206A_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S
THERMAL CHARACTERISTICS
Symbol
Ratings
R_∂JC
Junction to case thermal resistance
R_∂JA
Junction to free air thermal resistance
Value
≤ 7.8
≤ 62.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
I_DRM
Repetitive peak
off-state current
V_D = Rated V_DRM, , I_G = 0
T_C = 110°C
-
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs -
I_GT
Gate trigger current
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
-
-
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
-
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs -
V_GT
Gate trigger voltage
V_supply = +12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
-
-
V_supply = -12 V†, R_L = 10 Ω, t_p(g) = > 20 µs
-
V_supply = +12 V†, I_G = 0
I_H
Holding current
initiating I_TM = 100 mA
-
V_supply = -12 V†, I_G = 0
initiating I_TM = -100 mA
-
I_L
Latching current
V_supply = +12 V† (seeNote7)
V_supply = -12 V† (seeNote7)
-
-
V_TM
Peak on-state
voltage
I_TM = ± 4.2 A, I_G = 50 mA (see Note6)
-
dv/dt
Critical rate of rise of V_DRM = Rated V_DRM, I_G = 0
off-state voltage
T_C = 110°C
-
dv/dt_©
Critical rise of
communication
voltage
V_DRM = Rated V_DRM, I_TRM = ± 4.2A
T_C = 85°C
±1
† All voltages are whit respect to Main Terminal 1.
-
±1 mA
0.5
5
-1.5
-2
-5
-5
mA
3.6 10
0.7
2
-0.7 -2
-0.8 -2
V
0.8
2
2
15
mA
-4 -15
-
-
30
-30
mA
±1.3 ±2.2 V
±50 -
V/µs
±1.3 ±2.5
30/10/2012
COMSET SEMICONDUCTORS
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