TIC206A_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – SILICON BIDIRECTIONAL TRIODE THYRISTOR

SEMICONDUCTORS
TIC206A, TIC206B, TIC206D, TIC206M, TIC206N, TIC206S
SILICON BIDIRECTIONAL TRIODE THYRISTOR
• 4 A RMS
• Glass Passivated Wafer
• 100 V to 800 V Off-State Voltage
• Max I_GT of 5 mA (Quadrants 1-3)
• Sensitive gate triacs
• Compliance to ROHS
DESCRIPTION
This device is a bidirectional triode thyristor (triac) which may be triggered from the off-state
to the on-state by either polarity of gate signal with main Terminal 2 at either polarity.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_DRM
I_T(RMS)
I_TSM
I_TSM
I_GM
P_GM
P_G(AV)
T_C
T_stg
T_L
Repetitive peak off-state voltage
(see Note1)
Full-cycle RMS on-state current at
(or below) 70°C case temperature
(see note2)
Peak on-state surge current
full-sine-wave (see Note3)
Peak on-state surge current
half-sine-wave (see Note4)
Peak gate current
Peak gate power dissipation at
(or below) 85°C case temperature
(pulse width ≤200 µs)
Average gate power dissipation at
(or below) 85°C case (see Note5)
Operating case temperature range
Storage temperature range
Lead temperature 1.6 mm from case
for 10 seconds
Value
Unit
A B DMS N
100 200 400 600 700 800 V
4
A
25
A
30
A
± 0.2
A
1.3
W
0.3
W
-40 to +110
°C
-40 to +125
°C
230
°C
30/10/2012
COMSET SEMICONDUCTORS
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