BU911_12 Datasheet, PDF(2/3 Page) Comset Semiconductor

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BU911_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – HIGH VOLTAGE POWER DARLINGTON

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NPN BU911

ELECTRICAL CHARACTERISTICS

TC=25Â°C unless otherwise noted

Symbol

Ratings

Test Condition(s) Min Typ Max Unit

ICEO

Collector Cutoff Current

VCE = 400V, IB = 0

1 mA

ICES

IEBO

VCEO

Collector Cutoff Current

Emitter Cutoff Current

VCE = 400V, VBE = 0

TC = 125Â°C

VBE = 5 V, IC = 0

Collector-Emitter Sustaining Voltage IC = 100 mA, IB = 0

400 -

5 mA

Didode Forward Voltage

IF =4 A

- 2.5 V

VCE(SAT)

Collector-Emitter Saturation Voltage

(*)

IC =2.5 A, IB =50 mA

IC =4 A, IB =200 mA

- 1.8

IC =2.5 A, IB =50 mA

VBE(SAT) Base-Emitter Saturation Voltage (*)

IC =4 A, IB =200 mA

- 2.2

- 2.5

(*) Pulse conditions : tp < 300 Âµs, duty cycle =1.5%

21/11/2012

COMSET SEMICONDUCTORS

2|3

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