BU911_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – HIGH VOLTAGE POWER DARLINGTON

NPN BU911
HIGH VOLTAGE POWER DARLINGTON
The BU911 are high voltage, silicon NPN transistors in monolithic Darlington mounted in Jedec
TO-220 plastic package.
They are designed for applications such as electronic ignition, DC and AD motor controls,
solenoid drivers, etc.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CES
V_EBO
I_C
I_CM
I_B
P_D
T_J
T_Stg
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current Peak
Base Current
Total Device Dissipation
Junction Temperature
Storage Temperature Range
Vbe=0
@ TC = 25°
Value
400
450
5
6
10
1
60
150
-65 to +150
Unit
V
V
V
A
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-c Thermal Resistance, Junction to case
Value
2.08
Unit
°C/W
21/11/2012
COMSET SEMICONDUCTORS
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