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BU508DF_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON DIFFUSED POWER TRANSISTOR
◁
SEMICONDUCTORS
NPN BU508DF
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO
Collector-Emitter
Breakdown Voltage
ICES
Collector Cutoff Current
IEBO
VCE(SAT)
VBE(SAT)
VF
hFE
COB
fT
Emitter Cutoff Current
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
Diode Forwardvoltage
DC Current Gain
Output Capacitance
Transition Frequency
Test Condition(s)
IC= 100 mA, IB=0
L= 25mH
VBE =0, VCE = 1500 V
VBE =0, VCE = 1500 V
Tj =125°C
VEB= 5 V, IC=0
IC= 4.5 A, IB= 1.6 A
IC= 4.5 A, IB= 2 A
IF= 4.5 A
IC= 500 mA, VCE = 5 V
VCB = 10 V, IE=0, f= 1MHz
VCE= 5 V, IC= 100 mA
Min Typ Max Unit
700 -
-
V
-
-
1
mA
-
-
2
-
- 300 mA
-
-
1
V
-
- 1.1
- 1.6 2
V
10 - 30 -
3
-
-
A
-
7
- MHz
15/10/2012
COMSET SEMICONDUCTORS
2|3
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