BU508DF_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON DIFFUSED POWER TRANSISTOR

SEMICONDUCTORS
NPN BU508DF
SILICON DIFFUSED POWER TRANSISTOR
The BU508DF is a NPN epitaxial-base transistor in TO3PFa package with integrated
efficiency diode.
It is intended for high voltage, high-speed.
Primarily for use in horizontal deflection circuits of colour television receivers.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_T
t_J
t_s
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current Peak
Base Current
Base Current Peak
Total Dissipation
@ T_mb < 25°
Junction Temperature
Storage Temperature range
Value
1500
700
5
8
15
4
6
34
150
-65 to +150
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Junction To Heatsink
Junction To Heatsink
Junction Ambient
Conditions
Without Heatsink Compound
With Heatsink Compound
In Free Air
Value
Typ. Max
- 3.7
- 2.8
35 -
Unit
V
V
V
A
A
A
A
W
°C
Unit
K/W
15/10/2012
COMSET SEMICONDUCTORS
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