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| BU508DF Datasheet, PDF (2/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor | |||
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ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICES
VCE0(SUS)
IEBO
VCE(SAT)
VBE(SAT)
VF
HFE
fT
Cc
ts
tf
Collector Cutoff Current
Collector-Emitter
Sustaining Voltage
Emitter Cutoff Current
Collector-Emitter
saturation Voltage
Base-Emitter saturation
Voltage
Forward Voltage
DC Current Gain
Transition frequency
Collector capacitance
Storage Time
Fall Time
Test Condition(s)
VCE= VCESM= 1500 V , VBE= 0
VCE= VCESM= 1500 V , VBE= 0 ,Tj =125°C
IC=0.1A , IB=0, L=25mH
VEB=6.0 V, IC=0
IC=4.5A , IB=2 A
IC=4.5 A , IB=2 A
IF=4.5 A
IC=100 mA , VCE=5.0 V
VCE=5 V , IC=0.1 A, f=5MHz
IE= ie= 0, VCB=10 V, f=1 MHz
-VIM= 4V, LB= 6µH
IC=ICsat, IB= 1.4A(-dIB/dt= 0.6A/µs)
Min Typ Mx Unit
-
-
-
-
1
2
mA
700 - -
V
- - 10 mA
- - 1.0
V
- - 1.3
- 1.6 2 V
5 13 30 -
- 7 - MHz
- 125 - pF
- 6.5 -
- 0.7 -
µs
MECHANICAL DATA CASE SOT199
Information furnished is believed to be accurate and reliable. However, CS assumes no responsability
for the consequences of use of such information nor for errors that could appear.
Data are subject to change without notice.
*
COMSET SEMICONDUCTORS
2/2
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