BU508DF Datasheet, PDF (1/2 Pages) NXP Semiconductors – Silicon Diffused Power Transistor

NPN BU508DF
SILICON DIFFUSED POWER TRANSISTORS
The BU508DF is NPN transistors in a fully isolated SOT199 envelope (with integrated efficiency diode for
the BU508DF).
They are a high voltage, high speed switching and they are intended for use in horizontal deflexion
circuits of colour television receivers.
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CEO
V_CESM
I_C
I_CM
I_B
I_Csat
I_BM
P_t
T_J
T_Stg
Ratings
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current
Collector Peak Current
Base Current
Collector Current saturation
Base Peak Current
Total Power Dissipation
Junction Temperature
Storage Temperature
I_B = 0
V_BE = 0
@ T_C = 25°
Value
700
1500
8
15
4
4.5
6
34
150
-65 to +150
Unit
V
V
A
A
A
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
R_thJ-mb
R_thJ-h
R_thJ-h
R_thJ-a
Ratings
Thermal Resistance, Junction to Mounting Base
Thermal Resistance, Junction to Hexternal Heatsink
Thermal Resistance, Junction to Hexternal Heatsink
Thermal Resistance, Junction to Ambient
ISOLATION
Symbol
Ratings
V_ISOL
C_ISOL
Isolation Voltage from all terminals to external
heatsink (peak value)
Isolation capacitance from collector to external
heatsink
Typ.
Value
1.0
3.7
2.8
35
Unit
K/W
K/W
K/W
K/W
Value
1500
21
Unit
V
pF
*
COMSET SEMICONDUCTORS
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