 English |
|
|
|
|
|
|
|
| BDY57_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON TRANSISTORS, DIFFUSED MESA | |||
| |||
| ◁ |
NPN BDY57 â BDY58
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO(SUS)
V(BR)CBO
V(BR)EBO
ICBO
ICER
IEBO
VCE(SAT)
h21E
fT
td + tr
ts + tf
Collector-Emitter
Breakdown Voltage (*)
Collector-Base
Breakdown Voltage (*)
Emitter-Base Breakdown
Voltage (*)
Collector-Base Cutoff
Current
Collector-Emitter Cutoff
Current
Emitter-Base Cutoff
Current
Collector-Emitter
saturation Voltage (*)
IC=100 mA, IB=0
IC=5.0mA, IE=0
IE=5.0 A, IC=0
VCB=120 V, IE=0 V
VCE=80 V, RBE=10
TCASE=100°C
VEB=10 V, IC=0 V
IC=10 A, IB=1.0 A
VCE=4 V, IC=10 A
Static Forward Current
transfer ratio (*)
Transition Frequency
VCE=4 V, IC=20 A
VCE=4 V, IC=10 A
TCASE=-30°C
VCE=15 V, IC=1.0 A
f=10 MHz
Turn-on time
Turn-off time
IC=15 A, IB=1.5 A
IC=15 A, IB1=1.5 A
IB2=-1.5 A
BDY57 80 -
BDY58 125 -
-
-
V
BDY57 120 -
BDY58 160 -
-
-
V
BDY57
BDY58
-
0.5 1.4
V
BDY57 -
BDY58 -
-
-
1.0
0.5
mA
BDY57
BDY58
-
- 10 mA
BDY57
BDY58
-
0.25 0.5 mA
BDY57
BDY58
-
0.5 1.4
V
BDY57
BDY58
20
-
60
BDY57
BDY58
-
15
-
V
BDY57
BDY58
10
-
-
BDY57
BDY58
10
30
- MHz
BDY57
BDY58
-
0.25 1
µs
BDY57
BDY58
-
1
2 µs
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
09/11/2012
COMSET SEMICONDUCTORS
2|3
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese