BDY57_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON TRANSISTORS, DIFFUSED MESA

NPN BDY57 – BDY58
SILICON TRANSISTORS, DIFFUSED MESA
The BDY57 and BDY58 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
I_B
P_TOT
T_{J TS}
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
@ TC = 25°
Junction Temperature Storage Temperature
Value
BDY57
BDY58
BDY57
BDY58
80
125
120
160
10
25
6
175
-65 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
1
Unit
°C/W
09/11/2012
COMSET SEMICONDUCTORS
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