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| BDY55_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – NPN SILICON TRANSISTORS, DIFFUSED MESA | |||
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BDY55 â BDY56
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
ICEO
IEBO
ICEX
VCE(SAT)
VCE(SAT)
VBE
HFE
fT
td + tr
ts + tf
Collector-Emitter Breakdown
Voltage (*)
Collector-Emitter Cutoff
Current
IC = 200 mA
IB = 0
VCE = 30 V
VCE = 60 V
Emitter-Base Cutoff Current VEB = 7 V
Collector-Emitter Cutoff
Current
Collector-Emitter saturation
Voltage (*)
Collector-Emitter saturation
Voltage (*)
Base-Emitter Voltage (*)
Static Forward Current
transfer ratio (*)
Transition Frequency
Turn-on time
Turn-off time
VCE = 100 V
VBE = -1.5 V
VCE = 100 V
VBE = -1.5 V
TCASE = 150°C
VCE = 150 V
VBE = -1.5 V
VCE = 150 V
VBE = -1.5 V
TCASE = 150°C
IC = 4.0 A
IB = 0.4 A
IC = 10 A
IB = 3.3 A
IC = 10 A
IB = 3.3 A
IC = 4.0 A
VCE = 4.0 V
VCE = 4 V
IC = 4 A
VCE = 4 V
IC =10 A
VCE = 4.0 V
IC = 1.0 A,
f = 10 MHz
IC = 5 A
IB = 1 A
IC = 5 A
IB1 = 1 A
IB2 = -0.5 A
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
BDY55
BDY56
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
Min Typ Max Unit
60 -
120 -
-
-
V
-
-
-
-
0.7
0.5
mA
-
-
-
-
5
3
mA
-
-
5
-
- 30
mA
-
-
3
-
- 30
-
- 1.1
V
-
- 2.5
-
- 2.5
-
- 1.8 V
20 - 70
V
10
10 -
- MHz
-
- 0.5 µs
-
-
2 µs
23/10/2012
COMSET SEMICONDUCTORS
2|3
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