BDY55_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – NPN SILICON TRANSISTORS, DIFFUSED MESA

BDY55 – BDY56
NPN SILICON TRANSISTORS, DIFFUSED MESA
The BDY55 and BDY56 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
V_CBO
V_EBO
I_C
I_B
P_TOT
T_J
T_S
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ T_C = 25°
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
BDY55
BDY56
BDY55
BDY56
60
120
100
150
7
15
7
117
200
-65 to +200
Unit
V
V
V
A
A
W
°C
Value
1.5
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
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