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BDX65_12 Datasheet, PDF (2/4 Pages) Comset Semiconductor – NPN SILICON DARLINGTON POWER TRANSISTOR
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BDX65 – A – B – C
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
Collector-Emitter Breakdown
Voltage (*)
ICEO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
ICBO
Collector-Base Cutoff Current
VCE(SAT)
Collector-Emitter saturation
Voltage (*)
VF
Forward Voltage (pulse
method)
VBE
Base-Emitter Voltage (*)
Test Condition(s)
IC=0.1 A
IB=0
L=25mH
VCE=30 V
VCE=40 V
VCE=50 V
VCE=60 V
VBE=5 V
VCBO=60 V
VCBO=40 V
TCASE=200°C
VCBO=50 V
VCBO=80 V
TCASE=200°C
VCBO=100 V
VCBO=60 V
TCASE=200°C
VCBO=120 V
VCBO=70 V
TCASE=200°
IC=5.0 A
IB=20 mA
IF=3 A
IC=5.0 A
VCE=3V
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
Min Typ Max Unit
60 -
80 -
100 -
120 -
-
-
-
-
-
-
-
-
-
-
-
V
-
1 mA
-
- 5.0 mA
-
- 0.4
-
-
3
-
- 0.4
-
-
3
-
-
0.4
-
-
-
3
-
- 0.4
-
-
3
-
-
2
V
- 1.8 -
V
-
- 2.5 V
24/10/2012
COMSET SEMICONDUCTORS
2|4
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