BDX65_12 Datasheet, PDF (1/4 Pages) Comset Semiconductor – NPN SILICON DARLINGTON POWER TRANSISTOR

BDX65 – A – B – C
NPN SILICON DARLINGTON POWER TRANSISTOR
The BDX65, BDX65A, BDX65 and BDX65C are mounted in TO-3 metal package.
High current power darlingtons designed for power amplification and switching applications.
The complementary PNP are BDX64, BDX64A, BDX64B, BDX64C.
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CEO
Collector-Emitter Voltage
V_CBO
V_EBO
I_C
I_B
P_T
T_J
T_S
Collector-BaseVoltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
I_C(RMS)
I_CM
@ T_C = 25°
Value
BDX65
BDX65A
BDX65B
BDX65C
BDX65
BDX65A
BDX65B
BDX65C
60
80
100
120
80
100
120
140
5.0
12
16
0.2
117
-55 to +200
Unit
V
V
V
A
A
W
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJ-C
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
24/10/2012
COMSET SEMICONDUCTORS
1|4