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| BDX20_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – SILICON TRANSISTORS EPITAXIAL BASE | |||
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PNP BDX20
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
VCEO(SUS)
VCEX
Collector-Emitter Sustaining
Voltage (*)
Collector-Emitter Breakdown
Voltage (*)
ICEX
Collector Cutoff Current
ICBO
IEBO
h21E
VCE(SAT)
VBE
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Static Forward Current Transfer
Ratio (*)
Collector-Emitter Saturation
Voltage (*)
Base-Emitter Voltage (*)
fT
Transition Frequency
In accordance with JEDEC Registration Data
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
Test Condition(s) Min Typ Max Unit
IC=-200 mA, IB=0
-140 -
-
V
IC=-100 mA, VBE=1.5 V -160 -
-
V
VCE=-140 V, VBE=1.5 V -
VCE=-140 V, VBE=1.5 V
TCASE=150°C
-
VCB=-140 V, IE=0
-
- -1.0
-
-10 mA
- -1.0 mA
VBE=-7.0 V, IC=0
IC=-3 A, VCE=-4 V
IC=10 A, VCE=-4 V
IC=-3 A, IB=-0.3 A
IC=-10 A, IB=-2 A
IC=-3 A, VCE=-4 V
IC=-10 A, VCE=-4 V
VCE=-10 V, IC=-1 A
f=1.0 MHz
-
- -5.0 mA
20 - 70
- 10 -
-
-
-
-
-
-1.0
-5.0
V
- -1.7 -
- -5.7 -
V
4
-
- MHz
08/11/2012
COMSET SEMICONDUCTORS
2|3
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