BDX20_12 Datasheet, PDF (1/3 Pages) Comset Semiconductor – SILICON TRANSISTORS EPITAXIAL BASE

PNP BDX20
SILICON TRANSISTORS EPITAXIAL BASE
The BDX20 are mounted in TO-3 metal package.
LF Large Signal Power Amplification
High Current Fast Switching
Thermal Fatigue Inspection
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
V_CBO
V_CEO
V_CEX
V_EBO
I_C
I_B
P_TOT
T_J
T_S
Collector to Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current – Continuous
Base Current – Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
V_BE=1.5 V
Value
-60
-140
-160
-7
-10
-7
117
200
-65 to +200
Unit
V
V
V
V
A
A
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
R_thJC
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
08/11/2012
COMSET SEMICONDUCTORS
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