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| BDX18_12 Datasheet, PDF (2/3 Pages) Comset Semiconductor – PNP SILICON TRANSISTOR EPITAXIAL BASE | |||
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BDX18 â BDX18N
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
VCEO(SUS)
VCEX(SUS)
VCER(SUS)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
IC=200 mA
IB=0
IC=-100 mA
VBE=1.5 V
IC=-200 mA
RBE=100 â¦
BDX18 -60
BDX18N -60
-
BDX18 -90 -
BDX18N -70 -
BDX18 -70 -
BDX18N -65 -
-
V
-
-
V
-
-
V
VCE=-90 V
VBE=1.5 V
BDX18
-
-
-5
ICEX
Collector-Emitter
Cutoff Current
VCE=-60 V, VBE=1.5 V
TCASE=150°C
VCE=-70 V
VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
BDX18N
-
-
-10
mA
-
-5
- -10
IEBO
Emitter-Base Cutoff
Current
VEB=-7 V
BDX18
BDX18N
-
-
-5 mA
VBE
Base-Emitter Voltage
(*)
IC=-4.0 A, VCE=-4.0V
BDX18
BDX18N
-
- -1.8 V
VCE(SAT)
Collector-Emitter
Saturation Voltage
IC=-4.0 A, IB=-0.4V
BDX18
BDX18N
-
- -1.1 V
fT
Transition Frequency
IC =-1A, VCE=-10 V
f=1 MHz
BDX18
BDX18N
-
4
- MHz
h21E
Static Forward Current
Transfer Ratio (*)
VCE=-4.0 V, IC=-4.0 A
BDX18
BDX18N
20
-
70
-
(*) Pulse Width â 300 µs, Duty Cycle â 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
05/10/2012
COMSET SEMICONDUCTORS
2|3
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